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405nm 450nm 635nm 638nm 650nm 808nm 850nm 940nm 980nm 5mw 100mw 200mw Laser Diode

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US$ 0.29

≥1 Pieces

Quick Details

Model Number:

405nm 450nm 635nm 638nm 650nm

Brand Name:

Sojay

Description:

standard

Place of Origin:

China

D/C:

Application:

lighting

Max. Forward Voltage:

Max. Reverse Voltage:

Max. Forward Current:

1.2mA

Max. Reverse Current:

5uA

Diode Type:

5.6

Technology:

semiconductor

Voltage - Peak Reverse (Max):

2.5

Current - Average Rectified (Io):

Voltage - Forward (Vf) (Max) @ If:

Current - Reverse Leakage @ Vr:

Operating Temperature:

-10~40°C, -10~40°C

Mounting Type:

soldering

Package / Case:

TO 56

Diode Configuration:

standard

Voltage - DC Reverse (Vr) (Max):

30v

Current - Average Rectified (Io) (per Diode):

Reverse Recovery Time (trr):

standard

Capacitance @ Vr, F:

standard

Current - Max:

standard

Resistance @ If, F:

standard

Power Dissipation (Max):

7mw

Capacitance Ratio:

standard

Capacitance Ratio Condition:

N/A

Q @ Vr, F:

not available

Configuration:

standard

Voltage - Zener (Nom) (Vz):

standard

Tolerance:

stardard

Power - Max:

7mw

Impedance (Max) (Zzt):

standard

Material:

Brass

Wavelength:

650nm

Packing type:

Through Hole

Max forward voltage:

Max reverse voltage:

Operation current:

1.2mA

Storage Temperature:

-15~85°C

Dimension:

3.5*5.6mm

Output Power:

5mw

Product Details

405nm 450nm 635nm 638nm 650nm 808nm 850nm 940nm 980nm 5mw 100mw 200mw Laser Diode

SPECIFICATION		650nm laser diode
1	Dimensions	3.5*5.6mm
2	Max forward voltage	6V
3	Operating current	1.2mA
4	Output power	5mW
5	Operating temp.rage	-10~40°C
6	Storage temp.range	-15~85 °C
7	Packing type	Through Hole
8	Material	Brass
9	Operating voltage	2.-2.5v
10	Mean time to failure(MTTF)	≥8 000h